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| NTE5400 thru NTE5406 Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR-thyristor) rated at 0.8 amps RMS maximum on-state current, with rated voltages up to 600 volts. These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge capabilities. Available in a TO-92 plastic package, these devices feature excellent environmental stress and temperature cycling characteristics and, coupled with their small size and electrical performance, lend themselves to various types of control functions encountered with sensors, motors, lamps, relays, counters, triggers, etc. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +100C), VRRM NTE5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V NTE5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V NTE5402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5403 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5405 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off-State Voltage (TC = +100C), VDRXM NTE5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V NTE5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V NTE5402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5403 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V NTE5404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5405 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8A Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . . 8A Peak Gate-Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak Gate-Power Dissipation (IGT IGTM for 3s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5C/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . +200C/W Electrical Characteristics: Parameter Peak Off-State Current Maximum On-State Voltage DC Holding Current DC Gate-Trigger Current DC Gate-Trigger Voltage I2t for Fusing Reference Critical Rate of Applied Forward Voltage Symbol IRRM IDRXM VTM IHOLD IGT VGT I2t Test Conditions VRRM = Max, VDRXM = Max, TC = +100C, RG-K = 1k TC = +25C, IT = 1.2A (Peak) TC = +25C VD = 6VDC, RL = 100, TC = +25C VD = 6VDC, RL = 100, TC = +25C > 1.5msoc Min - - - - - - - - Typ - - - - 50 - - 5 Max 50 50 1.7 5 200 0.8 0.15 - Unit A A V mA A V A2sec V/s dv/dt TC = +100C (critical) .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max KG A .100 (2.54) .050 (1.27) .105 (2.67) Max .205 (5.2) Max .165 (4.2) Max .105 (2.67) Max |
Price & Availability of NTE5406
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